Author:
Lee Kwang-Woon,Hong Sung-Min
Funder
National Research Foundation of Korea
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond;Kim,2015
2. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET;Loubet,2017
3. Bae G, Bae D-I, Kang M, Hwang S, Kim S, Seo B, et al. 3nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications. In: 2018 IEEE international electron devices meeting (IEDM); 2018. p. 28.7.1–28.7.4.
4. Continuous analytic IV model for surrounding-gate MOSFETs;Jiménez;IEEE Electr Dev Lett,2004
5. Explicit continuous model for long-channel undoped surrounding gate MOSFETs;Iniguez;IEEE Trans Electr Dev,2005
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