Hot-carrier-induced device degradation in Schottky barrier ambipolar polysilicon transistor-Reference-Cited by-同舟云学术

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Hot-carrier-induced device degradation in Schottky barrier ambipolar polysilicon transistor

Published:2021-12 Issue: Volume:186 Page:108151
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cheon Kim Dae,Uk Kim Dong,Reum Lee Ah,Cho Man-Ho,Cho Won-Ju,Tae Park Jong

Funder

Incheon National University

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. On the performance of single-gate ultrathin-body SOI Schottky-Barrier MOSFETs;Knoch;IEEE Trans Electron Device,2006

2. Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors;Peng;Appl Phys Lett,2008

3. Demonstration of Schottky Barrier NMOS transistors with Erbium silicided source/drain and silicon nanowire channel;Tan;IEEE Electron Device Lett,2008

4. Asymmetric Schottky tunneling source SOI MOSFET design for mixed-mode applications;Jhaveri;IEEE Trans Electron Devices,2009

5. Ambipolar schottky-barrier TFETs;Lin;IEEE Trans Electron Devices,2002

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