Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects-Reference-Cited by-同舟云学术

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Published:2016-09 Issue: Volume:123 Page:19-25
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jarndal Anwar^ORCID,Ghannouchi Fadhel M.

Funder

University of Sharjah

University of Calgary

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs;Vetury;IEEE Trans Electron Dev,2001

5. Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement;Yang;Appl Phys Lett,2014

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