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Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si

  • Published:2017-11 Issue: Volume:137 Page:117-122
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Kumar Sandeep,Remesh Nayana,Dolmanan S.B.,Tripathy S.,Raghavan S.,Muralidharan R.,Nath Digbijoy N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. AlGaN/GaN HEMTs – An overview of device operation and applications;Mishra;Proc IEEE,2002

2. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008

3. GaN power electronics;Lu,2010

4. Review of commercial GaN power devices and GaN-based converter design challenges;Jones;IEEE J Emerg Sel Top POWER Electron,2016

5. Power electronics on InAlN/(In)GaN: prospect for a record performance;Kuzmik;IEEE Electron Device Lett,2001

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