Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterojunction bipolar transistor by surface chemical passivation;Sandroff;Appl Phys Lett,1987
2. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors;Liu;IEEE Trans Electron Dev,1992
3. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors;Lee;IEEE Electron Dev Lett,1989
4. 1/f Noise Reduction in self-aligned AlGaAs/GaAs HBT with AlGaAs surface passivation layer;Hayama;IEEE Trans Electron Dev,1992
5. Low-frequency noise properties of N–p–n AlGaAs/GaAs heterojunction bipolar transistors;Costa;IEEE Trans Electron Dev,1992
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1. AZO-Gated Al[sub 0.2]Ga[sub 0.8]As∕In[sub 0.2]Ga[sub 0.8]As High Electron Mobility Transistors;Electrochemical and Solid-State Letters;2010
2. SiN-passivated Γ-gate Al0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method;Applied Physics Letters;2009-08-31
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