Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions-Reference-Cited by-同舟云学术

Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions

Published:2005-08 Issue:8 Volume:49 Page:1376-1380
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cordier C.,Boukhenoufa A.,Pichon L.,Michaud J.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. Pichon L, Mercha A, Bonnaud O, Carin R. Conduction and low-frequency noise: diagnostic tools for low-temperature (<600°C) polysilicon thin film transistors technology. In: Kuo Y, editor. Thin film transistor technologies electrochemical society meeting proceedings, Salt Lake City 2002. p. 246–56, 2002 (invited paper).

4. Michaud JF. Ph.D Dissertation, University of Rennes I, 2004.

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