Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology-Reference-Cited by-同舟云学术

Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology

Published:2008-12 Issue:12 Volume:52 Page:1915-1923
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

El Kaamouchi M.,Delatte P.,Si Moussa M.,Raskin J.-P.,Vanhoenacker-Janvier D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. Lederer D. Wideband characterization of advanced SOI material and MOS devices for high frequency applications. PhD thesis, Université catholique de Louvain, October 2006.

4. Si Moussa M. CMOS SOI Distributed Amplifiers for new communication systems. PhD thesis, Université catholique de Louvain, September 2006.

5. Optimizing the design of spiral inductors on silicon;Post;IEEE Trans Circ Syst II,2000

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