Capacitance and conductance characteristics of silicon nanocrystal metal–insulator–semiconductor devices

Author:

Flynn C.,König D.,Perez-Wurfl I.,Conibeer G.,Green M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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2. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion-I theory;Green;Solid-State Electron,1974

3. Capacitance–voltage study of SiO2/nanocrystalline silicon/SiO2 double-barrier structures;Wu;Thin Solid Films,2003

4. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology;Kern;RCA Rev,1970

5. Small-angle cleavage of semiconductors for transmission electron microscopy;McCaffrey;Ultramicroscopy,1991

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1. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates;IEEE Transactions on Electron Devices;2018-05

2. Capacitance properties of MOS capacitors with oxide-hosted Si nanoparticles;SPIE Proceedings;2013-01-08

3. n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

4. Correlation between fixed charge and capacitance peaks in silicon nanocrystal metal–insulator–semiconductor devices;Semiconductor Science and Technology;2010-03-09

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