Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Kono H, Takao K, Suzuki T, Shinohe T. High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module. In: 2014 IEEE 26th international symposium on power semiconductor devices IC’s (ISPSD). p. 289–292.
2. Plasma extraction transit time oscillations in bipolar power devices;Gutsmann;Solid-State Electron,2002
3. Oscillation effects in igbt’s related to negative capacitance phenomena;Omura;IEEE Trans Electron Devices,1999
4. An analysis and experimental verification of parasitic oscillations in paralleled power MOSFET’s;Kassakian;IEEE Trans Electron Devices,1984
5. Circuit analysis of active mode parasitic oscillations in IGBT modules;Palmer;IEE Proc Circ Devices Syst,2003
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1. Parasitic Oscillation Analysis of Trench IGBT During Short-Circuit Type II Using TCAD-Based Signal Flow Graph Model;IEEE Transactions on Electron Devices;2022-10
2. Modelling of Multigate MOSFET Short Channel Structure for Low Power Application;Journal of Physics: Conference Series;2021-07-01
3. A Matrix Approach for Analyzing Signal Flow Graph;Information;2020-11-30
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