Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells-Reference-Cited by-同舟云学术

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Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

Published:2017-03 Issue: Volume:129 Page:29-34
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Miyoshi Makoto,Tsutsumi Tatsuya,Kabata Tomoki,Mori Takuma,Egawa Takashi

Funder

Super Cluster Program of the Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Superior radiation resistance of In1−xGaxN alloys: full-solar-spectrum photovoltaic material system;Wu;J Appl Phys,2003

2. Design and characterization of GaN/InGaN solar cells;Jani;Appl Phys Lett,2007

3. High internal and external quantum efficiency InGaN/GaN solar cells;Matioli;Appl Phys Lett,2011

4. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520nm;Farrell;Appl Phys Lett,2011

5. InGaN solar cells: present state of the art and important challenges;Bhuiyan;IEEE J Photovolt,2012

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment;Solar Energy Materials and Solar Cells;2024-09

2. Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing;physica status solidi (a);2024-08-23

3. Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system;Semiconductor Science and Technology;2024-03-07

4. Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells;Materials Today Energy;2023-01

5. Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects;Sensors and Actuators A: Physical;2022-11

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