Modeling of N-well device and N-well field resistors-Reference-Cited by-同舟云学术

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Modeling of N-well device and N-well field resistors

Published:2006-11 Issue:11-12 Volume:50 Page:1696-1704
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kumar Singh Rahul,Roy J.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Cheng Y, et al., BSIM3 Version 3.0 Manual, University of California/Berkley: Electronics Research Laboratory; 1995.

2. www.silvaco.com/resourcescenter/en/whitePapers/TCAD/techInfoDevSim.jsp.

3. HSPICE User’s Manual, Meta-Software: Campbell, California; 1993.

4. Device electronics for integrated circuits;Muller,1986

5. CMOS analog circuit design;Allen,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation research on single event effect of N-well resistor;Acta Physica Sinica;2023

2. Failure Analysis of Commercial Ferroelectric Random Access Memory for Single Event Effect;IEEE Transactions on Nuclear Science;2022-04

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