Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs

Author:

Yi Boram,Park Yeong-Hun,Yang Ji-Woon

Funder

MOTIE

KEIT

IC Design Education Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability;Nagy;IEEE Electron Devices Society,2018

2. Gate All Around FET: An Alternative of FinFET for Future Technology Nodes;Mohan;Int. J. Adv. Res. Sci. Eng.,2017

3. Gate-All-Around Silicon Nanowire Transistor with channel-last process on bulk Si substrate;Ma;IEICE Electronics Express,2015

4. Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels;Park;IEEE Trans. Electron Devices,2017

5. Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential;Pradhan;Ain Shams Eng. J.,2015

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