A comprehensive four parameters I–V model for GaAs MESFET output characteristics

Author:

Memon N.M.,Ahmed M.M.,Rehman F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Golio JM. Microwave MESFETs and HEMTs., Boston: Artech House; 1991.

2. A MESFET model for use in the design of GaAs integrated circuits;Curtice;IEEE Trans Microwave Theory Tech,1980

3. Compact DC model of GaAs FETs for large-signal computer calculation;Kacprzak;IEEE J Solid State Circ,1983

4. GaAs FET device and circuit simulation in SPICE;Statz;IEEE Trans Electron Dev,1987

5. An improved GaAs MESFET model for SPICE;McCamant;IEEE Trans Microwave Theory Tech,1990

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