Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe;Levinshteĭn,2001
2. Gate injection transistor (GIT)—A normally-off AlGaN/GaN power transistor using conductivity modulation;Uemoto;IEEE Trans Electron Dev,2007
3. Review of commercial GaN power devices and GaN based converter design challenges;Jones;IEEE J Emerg Select Top Power Electron,2016
4. Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices;Khandelwal;IEEE Trans Electron Dev,2012
5. Kotecha R, Zhang Y, Wallace A, Zhu N, Rashid A, Vrotsos T, Mantooth H. An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design. In: 2017 IEEE 18th workshop on control and modeling for power electronics (COMPEL); 2017.
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