2D and 3D TCAD simulation of III-V channel FETs at the end of scaling

Author:

Aguirre P.,Rau M.,Schenk A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Nanometer-scale electronics with III-V compound semiconductors;del Alamo;Nature,2011

2. Quantum device-simulation with the density-gradient model on unstructured grids;Wettstein;IEEE Trans. Electron Devices,2001

3. Self-consistent modeling of longitudinal quantum effects in nanoscale double-gate metal oxide semiconductor field effect transistors;Heinz;J Appl Phys,2006

4. Drift-diffusion quantum corrections for In0.53Ga0.47As double gate ultra-thin-body FETs;Aguirre,2016

5. Sentaurus-Device Monte Carlo (S-Band) User Guide, V-2016.03, Synopsys Inc., Mountain View, California, 2016.

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