Author:
Ho Han-Chieh,Liu Hong-Kai,He Wei-Zhi,Lin Heng-Kuang,Hsin Yue-Ming
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Well width dependence of electron transport in molecular-beam epitaxially grown InAs/AlSb quantum wells;Bolognesi;J Vac Sci Technol B,1992
2. Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses;Dobrovolskis;Appl Phys A-Mater,1989
3. Bergman J, Nagy G, Sullivan G, Ikhlassi A, Brar B, Kadow C, et al. Low-voltage, higher-performance InAs/AlSb HEMTs with power gain above 100GHz at 100mV drain bias. In: Proc. 62nd Device Research Conf; 2004. p. 243–4.
4. Tsai R, Barsky M, Boos JB, Bennett BR, Lee J, Papanicolaou NA, et al. Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics. In: IEEE Proc. GaAs IC Symp; 2003. p. 294–7.
5. Ma BY, Bergman J, Chen PS, Hacker JB, Sullivan G, Brar B. Ultra-wideband ultra-low-dc-power high gain differential-input low noise amplifier MMIC using InAs/AlSb HEMT. In: IEEE Compound Semiconductor Integrated Circuit Symp; 2007. p. 1–4.
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