Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
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1. A Guideline for Electron Mobility Enhancement in Uniaxially-Strained (100)/〈100〉 and (110)/〈110〉 Fin Field Effect Transistors;Journal of Nanoscience and Nanotechnology;2017-05-01
2. A 1D numerical model for rapid stress analysis in bipolar junction transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-05-27
3. Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential;Journal of Nanoscience and Nanotechnology;2016-05-01
4. Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs;Applied Physics Express;2015-11-30
5. Scattering mechanism of hole in (001), (101), (111) biaxially-strained Si and Si1−xGexmaterials;Journal of Semiconductors;2015-07
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