Capacitance measurements in nanometric silicon devices using Coulomb blockade-Reference-Cited by-同舟云学术

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Capacitance measurements in nanometric silicon devices using Coulomb blockade

Published:2007-04 Issue:4 Volume:51 Page:560-564
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hofheinz M.,Jehl X.,Sanquer M.,Cueto O.,Molas G.,Vinet M.,Deleonibus S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Controlled single-electron effects in non-overlapped ultra short silicon field effect transistor;Bœuf;IEEE Trans Nanotechnol,2003

2. Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances;Jehl;IEEE Trans Nanotechnol,2003

3. Size scaling of the addition spectra in silicon quantum dots;Boehm;Phys Rev,2005

4. Statistics of the charging spectrum of a two-dimensional Coulomb-glass island;Koulakov;Phys Rev B,1997

5. Peak spacing statistics in silicon single-electron transistors: size and gate oxide thickness dependence;Jehl;EP2DS 2005, Physica E,2006

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1. Application of Silicon Nanowires;Current Nanoscience;2024-04-02

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