Impact of Schottky contacts on p-type back enhanced SOI MOSFETs

Author:

Yojo Leonardo S.,Rangel Ricardo C.,Sasaki Katia R.A.,Ortiz-Conde Adelmo,Martino João A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Future of nano CMOS technology;Iwai;Solid State Electron,2015

2. Claeys C, Simoen E.Challenges for advanced end of the roadmap, beyond Si and beyond CMOS technologies. In: 32nd Symposium on microelectronics technology and devices (SBMicro), 2017. DOI: 10.1109/sbmicro.2017.8112970.

3. Rangel RC, Martino JA. “Back enhanced (BE) SOI pMOSFET”, microelectronics technology and devices (SBMicro), 2015 30th symposium, Salvador, Brazil. p. 1–4. DOI: 10.1109/SBMicro.2015.7298121.

4. Martino JA, Rangel RC. Transistor com formaçao de fonte e dreno induzida por efeito de campo elétrico e seu método de fabricaçao, Brasil Patent BR, Sao Paulo, 10 2015 020974 6, 28 Agosto 2015.

5. Back enhanced (BE) SOI MOSFET under non-conventional bias condition;Yojo;Proc EUROSOI-ULIS,2017

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