AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers

Author:

Gillespie J.,Crespo A.,Fitch R.,Jessen G.,Via G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans Electron Dev,2001

2. 10-W/mm AlGaN-GaN HFET with a field modulation plate;Ando;IEEE Electron Dev Lett,2003

3. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Dev Lett,2004

4. Crespo A, Fitch R, Gillespie J, Moser N, Via G, Yannuzzi M. Ti/Al/Ni/Au ohmic contacts on AlGaN/GaN HEMTs. Int Conf on GaAs Man 2003

5. Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN;Kumar;J Appl Phys,2002

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1. The role of the Ti and Mo barrier layer in Ti/Al metallization to AlGaN/GaN heterostructures at identical process conditions: a structural and chemical characterization;Semiconductor Science and Technology;2015-10-09

2. Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-07

3. Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices;Journal of Physics D: Applied Physics;2014-04-16

4. Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor;Japanese Journal of Applied Physics;2013-08-01

5. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

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