Modeling of program, erase and retention characteristics of charge-trap gate all around memories-Reference-Cited by-同舟云学术

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Modeling of program, erase and retention characteristics of charge-trap gate all around memories

Published:2011-04 Issue:1 Volume:58 Page:75-82
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nowak Etienne,Perniola Luca,Ghibaudo Gérard,Molas Gabriel,Reimbold Gilles,De Salvo Barbara,Boulanger Fabien

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference57 articles.

1. Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory;Japanese Journal of Applied Physics;2016-12-20

2. New Erase Constraint for the Junction-Less Charge-Trap Memory Array in Cylindrical Geometry;IEEE Transactions on Electron Devices;2013-07

3. Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells;Solid-State Electronics;2013-01

4. Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius;IEEE Electron Device Letters;2012-11

5. Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices;IEEE Transactions on Electron Devices;2012-07

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