Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors-Reference-Cited by-同舟云学术

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Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

Published:2020-09 Issue: Volume:171 Page:107798
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Peng,Jacques Emmanuel,Rogel Régis,Pichon Laurent,Bonnaud Olivier

Funder

Natural Science Foundation of Jiangsu Province

SEM

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. An LTPS TFT Demodulator for RFID Tags Embeddable on Panel Displays

2. Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)—Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM

3. Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology

4. A poly-Si AMOLED display with high uniformity

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elucidation of electric characteristics for P and N type polycrystalline silicon vertical thin film transistors;Journal of Physics D: Applied Physics;2022-10-27

2. Light Emitted Diode on Detecting Thin-Film Transistor through Line-Scan Photosensor;Micromachines;2021-04-14

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