Temperature-dependent source access resistance in AlGaN/AlN/GaN HFETs with different ratios of gate-source distance to gate-drain distance-Reference-Cited by-同舟云学术

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Temperature-dependent source access resistance in AlGaN/AlN/GaN HFETs with different ratios of gate-source distance to gate-drain distance

Published:2022-07 Issue: Volume:193 Page:108290
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Liu Yan,Wang Tao,Huang Changyang,Chen Simin

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers;Camarchia;IEEE Trans Microw Theory,2020

2. GaN-Based RF Power Devices and Amplifiers;Mishra;Proc IEEE,2008

3. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications;Shinohara;IEEE Trans Electron Devices,2013

4. Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs;Yang;IEEE Trans Electron Devices,2016

5. Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs;Cui;IEEE Trans Electron Devices,2017

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