Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%-Reference-Cited by-同舟云学术

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Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%

Published:2015-06 Issue: Volume:108 Page:19-23
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luong G.V.,Knoll L.,Blaeser S.,Süess M.J.,Sigg H.,Schäfer A.,Trellenkamp S.,Bourdelle K.K.,Buca D.,Zhao Q.T.,Mantl S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Strain: a solution for higher carrier mobility in nanoscale MOSFETs;Chu;Annu Rev Mater Res,2009

2. Measurement of effective electron mass in biaxial tensile strained silicon on insulator;Feste;Appl Phys Lett,2009

3. Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs;Irisawa;IEEE Trans Electron Devices,2008

4. Uniaxial-process-induced strained-Si: extending the CMOS roadmap;Thompson;IEEE Trans Electron Devices,2006

5. Si/SiGe heterostructures: from material and physics to devices and circuits;Paul;Semicond Sci Technol,2004

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1. Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects;Semiconductor Science and Technology;2020-01-06

2. High density GaAs nanowire arrays through substrate processing engineering;Materials Research Express;2018-12-05

3. Top-down method to introduce ultra-high elastic strain;Journal of Materials Research;2017-02-14

4. Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications;Journal of Computational Electronics;2016-12-19

5. Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography;ACS Applied Materials & Interfaces;2016-09-27

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