Comprehensive evaluation of torques in ultra-scaled MRAM devices-Reference-Cited by-同舟云学术

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Comprehensive evaluation of torques in ultra-scaled MRAM devices

Published:2023-01 Issue: Volume:199 Page:108491
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fiorentini S.^ORCID,Ender J.,Selberherr S.,de Orio R.L.,Goes W.,Sverdlov V.

Funder

Bundesministerium für Digitalisierung und Wirtschaftsstandort

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Christian Doppler Forschungsgesellschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Demonstration of a reliable 1 Gb standalone spin-transfer Torque MRAM for industrial applications;Aggarwal,2019

2. 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications;Alzate,2019

3. JEDEC-qualified highly reliable 22nm FD-SOI embedded MRAM for low-power industrial-grade, and extended performance towards automotive-grade-1 applications;Naik,2020

4. A reflow-capable, embedded 8Mb STT-MRAM macro with 9ns read access time in 16nm FinFET logic CMOS process;Shih,2020

5. 28 Nm 0.08 mm2/Mb embedded MRAM for frame buffer memory;Han,2020

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