Overview and future challenges of floating body RAM (FBRAM) technology for 32nm technology node and beyond-Reference-Cited by-同舟云学术

Overview and future challenges of floating body RAM (FBRAM) technology for 32nm technology node and beyond

Published:2009-07 Issue:7 Volume:53 Page:676-683
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hamamoto Takeshi,Ohsawa Takashi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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3. Inoh K, Shino T, Yamada H, Nakajima H, Minami Y, Yamada T, et al. FBC (floating body cell) for embedded DRAM on SOI. In: VLSI symp. tech. dig.; 2003; p. 63–4.

4. Villaret A, Ranica R, Mazoyer P, Candelier P, Jacquet F, Cristoloveanu S, et al. Triple-well nMOSFET evaluated as a capacitor-less DRAM cell for nanoscale low-cost & high density applications. In: Proc. VLSI nanoworkshop; 2003. p. 40–1.

5. Yoshida E, Tanaka T. A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory. In: IEDM tech. dig.; 2003. p. 913–6.

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