Surface scattering impact on Si/TiSi2 contact resistance-Reference-Cited by-同舟云学术

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Surface scattering impact on Si/TiSi2 contact resistance

Published:2023-03 Issue: Volume:201 Page:108583
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Vuttivorakulchai Kantawong,Pourghaderi Mohammad Ali,Kim Gwang-Jun,Song Seunghyun,Kim Yoon-Suk,Kwon Uihui,Kim Dae Sin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. The PseudoDojo: Training and Grading a 85 Element Optimized Norm-conserving Pseudopotential Table;van Setten;Comput Phys Commun,2018

2. Effect of Realistic Metal Electronic Structure on the Lower Limit of Contact Resistivity of Epitaxial Metal-Semiconductor Contacts;Hegde;Appl Phys Lett,2014

3. Full Band Calculations of the Intrinsic Lower Limit of Contact Resistivity;Maassen;Appl Phys Lett,2013

4. QuantumATK: An Integrated Platform of Electronic and Atomic-scale Modelling Tools;Smidstrup;J Phys: Condens Matter,2019

5. Titanium Silicide on Si: P with Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching 1 × 10–9 Ohm-cm2;Yu;IEEE Trans Electron Devices,2016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and property of multilayer TiN/TiCN nanocrystalline coating used for metal bipolar plate;Vacuum;2024-09

2. Theoretical Limit of TiSi₂ Contact Resistance : *Note: Sub-titles are not captured in Xplore and should not be used;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

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