Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies-Reference-Cited by-同舟云学术

Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies

Published:2013-02 Issue: Volume:80 Page:59-62
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang Hsu-Yu,Chopra Saurabh,Adams Bruce,Li Jiping,Sharma Shashank,Kim Yihwan,Moffatt Steve,Woo Jason C.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

2. Jeon K, Loh W-Y, Patel P, Kang CY, Oh J, Bowonder A, Park C, Park 1 CS, Smith 1 C, Majhi P, Tseng H-H, Jammy R, Liu T-JK, Hu C. In: VLSI Symp Tech Dig; 2010. p. 121–22.

3. Ng physics of semiconductor devices;Sze,2007

4. Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling Junction

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