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A novel method of electrical characterization of a semiconductor diode at forward bias

  • Published:2006-05 Issue:5 Volume:50 Page:821-825
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Zhu C.Y.,Wang C.D.,Feng L.F.,Zhang G.Y.,Yu L.S.,Shen J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. The electrical characterization of semiconductors: Majority carries and electron states;Blood,1992

2. Physics of semiconductor devices;Sze,1981

3. Metal–semiconductor contacts;Rhoderick,1988

4. Semiconductor material and device characterization;Shroder,1990

5. A modified forward I–V plot for Schotty diodes with high series resistance;Norde;J Appl Phys,1979
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