Study of improved reverse recovery in power transistor incorporating universal contact
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Modern power devices;Baliga,1987
2. Novel low-loss and high speed diode utilizing an ‘ideal’ ohmic contact;Amemiya;IEEE Trans. Electron Devices,1982
3. A novel method of reducing the storage time of transistors;Narain;IEEE Electron Device Lett.,1985
4. Silvaco International Inc. ATLAS User Manual 1996, Device Simulation Software
5. A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery;Anand;Solid-State Electron.,2003
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