Non-metallic effects in silicided gate MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide MOSFET behavior: the influence of crystallographic orientation;Rodriguez;IEEE Trans Electron Dev,2007
2. Polysilicon quantization effects on electrical properties of MOS transitors;Spinelli;IEEE Trans Electron Dev,2000
3. An analytical model for flat-band polysilicon quantization in MOS devices;Spinelli;IEEE Trans Electron Dev,2002
4. ITRS Website. .
5. Mistry K. et al. A 45nm logic technology with high-k+metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging. In: Technical digest of IEDM 2007; 2007.
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