Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces-Reference-Cited by-同舟云学术

Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces

Published:2011-03 Issue:1 Volume:57 Page:83-86
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hamaide G.,Allibert F.,Andrieu F.,Romanjek K.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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3. Ohata A, Cassé M, Cristoloveanu S, Poiroux T. Mobility issues in ultra-thin SOI MOSFETs: thickness variations, GIFBE and coupling effects. In: Proc ESSDERC; 2004. p. 109–12.

4. Allibert F, Bresson N, Bellatreche K, Maunand-Tussot C, Cristoloveanu S. Electrical characterization of ultra-thin SOI films: comparison of the pseudo-MOSFET and Hg-FET Techniques. In: IEEE international SOI conference, Hawaï; 2005.

5. New method for the extraction of MOSFET parameters;Ghibaudo;Electron Lett,1988

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