Current density–voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Film Properties of Nanocrystalline 3C–SiC Thin Films Deposited on Glass Substrates by Hot-Wire Chemical Vapor Deposition Using CH4as a Carbon Source
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5. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Current-voltage characteristics of neutron irradiated nanocrystalline silicon carbide (3C SiC);Physica B: Condensed Matter;2018-09
2. Diodes of nanocrystalline SiC on n−/n+-type epitaxial crystalline 6H-SiC;Applied Surface Science;2018-03
3. Optical emission spectroscopy diagnosis of energetic Ar ions in synthesis of SiC polytypes by DC arc discharge plasma;Nano Research;2018-02-02
4. Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes;Thin Solid Films;2016-11
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