Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: Preparation from gas/solid reaction and downscaling to an area of 0.25μm2

Author:

Müller Robert,De Jonge Stijn,Myny Kris,Wouters Dirk J.,Genoe Jan,Heremans Paul

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Baek IG, Lee MS, Seo S, Lee MJ, Seo DH, Suh DS, et al. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. In: Electron devices meeting, 2004. IEDM Technical Digest. IEEE International, 13–15 December 2004. p. 587–90.

2. Ahn SJ, Song YJ, Jeong CW, Shin JM, Fai Y, Hwang YN, et al. Highly manufacturable high density phase change memory of 64Mb and beyond. In: Electron devices meeting, 2004. IEDM Technical Digest. IEEE International, 13–15 December 2004. p. 907–10.

3. Nanoscale memory elements based on solid-state electrolytes;Kozicki;IEEE Trans Nanotechnol,2005

4. Electrical switching and memory phenomena in Cu–TCNQ thin-films;Potember;Appl Phys Lett,1979

5. Electrochemical studies of the mechanism of the formation of metal–TCNQ charge-transfer complex film;Duan;J Electrochem Soc,1993

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