Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors

Published:2013-03 Issue: Volume:81 Page:5-7
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lim H.W.,Baek C.H.,Kang B.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers;Liou;IEEE Trans Electron Dev,1994

2. Thermal characterization of thermally-shunted heterojunction bipolar transistors;Sewell;IEEE Electron Device Lett,1996

3. Comparison of thermal-shunt and flip-chip HBT thermal impedance: comment on novel HBT with reduced thermal impedance;Jenkins;IEEE Microw Guided Wave Lett,1993

4. A quantitative study of emitter ballasting;Arnold;IEEE Trans Electron Dev,1974

5. Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors;Gao;IEEE Trans Electron Dev,1991

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