Author:
Tan J.,Lim J.H.,Kwon J.H.,Naik V.B.,Raghavan N.,Pey K.L.
Funder
Economic Development Board - Singapore
Singapore University of Technology and Design
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. V. B. Naik et al., “JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications,” 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2020, pp. 11.3.1-11.3.4.
2. T. Devolder, J.-V. Kim, F. Garcia-Sanchez, J. Swerts, W. Kim, S. Couet, G. Kar, and A. Furnemont, “Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions,” Physical Review B, vol. 93, no. 2, 2016.
3. IEEE Symposium on VLSI Technology;Wu;Honolulu, HI, USA,2020
4. J. J. Nowak et al., “Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory,” in IEEE Magnetics Letters, vol. 7, pp. 1-4, 2016, Art no. 3102604.
5. Temperature Impact Analysis and Access Reliability Enhancement for 1T1MTJ STT-RAM;Bi;IEEE Transactions on Reliability, Institute of Electrical and Electronics Engineers,2016
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