Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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4. Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses;Meng;Phys Rev B,2022
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1. Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization;Physical Review Research;2023-11-09
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