Unified RTN and BTI statistical compact modeling from a defect-centric perspective-Reference-Cited by-同舟云学术

Unified RTN and BTI statistical compact modeling from a defect-centric perspective

Published:2021-11 Issue: Volume:185 Page:108112
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pedreira G.,Martin-Martinez J.,Saraza-Canflanca P.,Castro-Lopez R.,Rodriguez R.,Roca E.,Fernandez F.V.,Nafria M.

Funder

European Regional Development Fund

Espana Ministerio de Ciencia e Innovacion

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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2. Realov S, Shepard KL. Random telegraph noise in 45-nm CMOS: Analysis using an on-chip test and measurement system, International Electron Devices Meeting IEDM; 2010. p. 28.2.1-28.2.4.

3. Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm;Tega;2009 Symposium on VLSI Technology,2009

4. Origin of NBTI variability in deeply scaled pFETs;Kaczer;2020 IEEE International Reliability Physics Symposium,2010

5. Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs;Markov;IEEE Electron Device Lett,2013

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