Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]
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Published:2023-01
Issue:
Volume:199
Page:108540
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ISSN:0038-1101
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Container-title:Solid-State Electronics
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language:en
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Short-container-title:Solid-State Electronics
Author:
Catapano E.,Aprà A.,Cassé M.,Gaillard F.,de Franceschi S.,Meunier T.,Vinet M.,Ghibaudo G.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials