H2S gas sensing properties in polysilicon control-gate FET-type gas sensor-Reference-Cited by-同舟云学术

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H2S gas sensing properties in polysilicon control-gate FET-type gas sensor

Published:2023-02 Issue: Volume:200 Page:108543
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Park Jinwoo,Hong Seongbin,Jeong Yujeong,Jung Gyuweon,Shin Wonjun,Kim Donghee,Lee Chayoung,Lee Jong-Ho

Funder

Seoul National University

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Room temperature H2S sensor based on Au modified ZnO nanowires;Ramgir;Sens Actuators B Chem,2013

2. Copper doped SnO2 nanowires as highly sensitive H2S gas sensor;Kumar;Sens Actuators B Chem,2009

3. Room temperature H2S gas sensor based on rather aligned ZnO nanorods with flower-like structures;Hosseini;Sens Actuators B Chem,2015

4. Design of highly porous SnO2-CuO nanotubes for enhancing H2S gas sensor performance;Park;Sens Actuators B Chem,2020

5. CuO-doped SnO2 thin films as hydrogen sulfide gas sensor;Khanna;Appl Phys Lett,2003

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise in gas sensors: A review;Sensors and Actuators B: Chemical;2023-05

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