A new analytical high frequency noise parameter model for AlGaN/GaN HEMT
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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3. 2-D analytical model for current–voltage characteristics and transconductance of AlGaN/GaN MODFETs;Li;IEEE Trans Electron Dev,2008
4. DC, RF, and microwave noise performances of AlGaN/GaN HEMT on sapphire substrates;Lu;IEEE Trans MTT,2002
5. The effect of gate leakage on the noise figure of AlGaN/GaN HEMT;Sanabria;IE EE EDL,2006
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1. Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-01-08
2. Analytical high frequency GaN HEMT model for noise simulations;Semiconductor Science and Technology;2017-11-07
3. Empowering GaN HEMT models: The gateway for power amplifier design;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-11-25
4. Deconvolution of calorimeter response from electrical signals for extracting kinetic data;Thermochimica Acta;2015-09
5. GaN HEMT noise modeling based on 50-Ω noise factor;Microwave and Optical Technology Letters;2015-02-24
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