Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base–collector capacitances of collector-up HBTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
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2. A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT’s);Rios;IEEE Trans Microwave Theory Tech,1997
3. A semianalytical parameter-extraction procedure for HBT equivalent circuit;Li;IEEE Trans Microwave Theory Tech,1998
4. Direct extraction of HBT equivalent-circuit elements;Rudolph;IEEE Trans Microwave Theory Tech,1999
5. A nonquasi-static table-based small-signal model of heterojunction bipolar transistor;Ko;IEEE Trans Electron Dev,2002
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base;Solid-State Electronics;2010-01
2. An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters;Solid-State Electronics;2008-11
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