On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes-Reference-Cited by-同舟云学术

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On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes

Published:2014-09 Issue: Volume:99 Page:11-15
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang C.K.,Chiou Y.Z.,Chang S.J.,Chang C.Y.,Chiang T.H.,Lin T.K.,Li X.Q.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes;Zhang;Appl Phys Lett,2013

2. Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes;Han;Appl Phys Lett,2013

3. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates;Zou;IEEE Electron Dev Lett,2013

4. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes;Liu;IEEE Photonics J,2013

5. Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate;Sheu;J Lightwave Technol,2013

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