Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors-Reference-Cited by-同舟云学术

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Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

Published:2018-04 Issue: Volume:142 Page:20-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chae Hee Jae^ORCID,Seok Ki Hwan,Lee Sol Kyu,Joo Seung Ki^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Thin-film poly-Si solar cells on glass substrate fabricated at low temperature;Yamamoto;Appl Phys A,1999

2. Low-temperature (≤550 C) fabrication of poly-Si thin-film transistors;King;IEEE Elect Device Lett,1992

3. An investigation of laser annealed and meta-induced crystallized polycrystalline silicon thin-film transistors;Murley;IEEE Trans Electron Dev,2001

4. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's;Sameshima;IEEE Elect Dev Lett,1986

5. Crystallization of LPCVD Silicon Films by Low Temperature Annealing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect;IEEE Electron Device Letters;2019-04

2. Polycrystalline transistor with multiple thresholds;Microelectronics Journal;2019-01

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