Hierarchical simulation of nanosheet field effect transistor: NESS flow

Author:

Nagy DanielORCID,Rezaei Ali,Xeni Nikolas,Dutta Tapas,Adamu-Lema Fikru,Topaloglu Ismail,Georgiev Vihar P.,Asenov Asen

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. 3nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications;Bae,2018

2. Monte Carlo comparison of n-type and p-type nanosheets with FinFETs: Effect of the number of sheets;Bufler;IEEE Trans Electron Devices,2020

3. Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes;Nagy;IEEE Access,2020

4. NESS, [Online]. Available https://www.gla.ac.uk/research/az/devmod/software/.

5. Nano-electronic Simulation Software (NESS): A flexible nano-device simulation platform;Berrada;J Comput Electron,2020

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