Physical study of the avalanche breakdown phenomenon in HEMTs

Author:

Elkhou M.,Rousseau M.,Gerard H.,De Jaeger J.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. An In0.15Ga0.85As/GaA pseudomorphic single quantum well HEMT;Rosenberg;IEEE Electron Device Lett,1985

2. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field effect transistor;Ketterson;IEEE Trans Electron Devices,1986

3. MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures;Shawki;IEEE Trans Electron Devices,1990

4. Delemer JD, Rousseau M, De Jaeger JC, Lefebvre M. Recent improvements of 2-D hydrodynamic model for HEMT simulations. In: 10th III–V Semiconductor device simulation workshop, 1997

5. Lush GB, Melloch MR, Lundstrom MS. Hole lifetimes in n-type GaAs. Emis data reviews series no. 16, p. 139 [INSPEC publication]

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