CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Author:

Gottlob H.D.B.,Echtermeyer T.,Mollenhauer T.,Efavi J.K.,Schmidt M.,Wahlbrink T.,Lemme M.C.,Kurz H.,Czernohorsky M.,Bugiel E.,Osten H.-J.,Fissel A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Nanoscale CMOS;Wong;Proc IEEE,1999

2. International Technology Roadmap for Semiconductors (ITRS), Process integration, devices, and structures. Available from: http://public.itrs.net, p. 23, 2004 update.

3. High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide;Osten;IEDM Tech Dig,2000

4. Properties of high-k gate dielectrics Gd2O3 and Y2O3 for Si;Kwo;J Appl Phys,2001

5. A dual-metal gate CMOS technology using nitrogen-concentration-controlled TINX film;Wakabayashi;IEEE Trans Electron Dev,2001

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