Author:
Gottlob H.D.B.,Echtermeyer T.,Mollenhauer T.,Efavi J.K.,Schmidt M.,Wahlbrink T.,Lemme M.C.,Kurz H.,Czernohorsky M.,Bugiel E.,Osten H.-J.,Fissel A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Nanoscale CMOS;Wong;Proc IEEE,1999
2. International Technology Roadmap for Semiconductors (ITRS), Process integration, devices, and structures. Available from: http://public.itrs.net, p. 23, 2004 update.
3. High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide;Osten;IEDM Tech Dig,2000
4. Properties of high-k gate dielectrics Gd2O3 and Y2O3 for Si;Kwo;J Appl Phys,2001
5. A dual-metal gate CMOS technology using nitrogen-concentration-controlled TINX film;Wakabayashi;IEEE Trans Electron Dev,2001
Cited by
38 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献