Exact solutions for the capacitance of space charge regions at semiconductor interfaces-Reference-Cited by-同舟云学术

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Exact solutions for the capacitance of space charge regions at semiconductor interfaces

Published:2007-06 Issue:6 Volume:51 Page:1002-1004
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Schmidt M.,Pickenhain R.,Grundmann M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. The electrical characterization of semiconductors: majority carriers and electron states;Blood,1992

2. Physics of semiconductor devices;Sze,1981

3. Classical electrodynamics;Jackson,1999

4. The physics of semiconductors;Grundmann,2006

5. Differentialgleichungen, Lösungsmethoden und Lösungen;Kamke,1959

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Space Charge Region beyond the Abrupt Approximation;physica status solidi (b);2023-09-08

2. New improved capacitance–voltage model for symmetrical step junction: a way to a unified model for realistic junctions;Journal of Computational Electronics;2014-09-06

3. New capacitance–voltage model for linearly graded junction;Journal of Computational Electronics;2014-02-19

4. Bohm criterion in a dusty plasma with nonextensive electrons and cold ions;Physics of Plasmas;2013-04

5. Accurate quasi static capacitance for abrupt homojunction under forward and reverse polarization;Bulletin of Materials Science;2013-04

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