CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits-Reference-Cited by-同舟云学术

CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits

Published:2010-01 Issue:1 Volume:54 Page:52-57
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hayati Mohsen,Rezaei Abbas,Seifi Majid

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

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4. Javanovic D, Venugopal R. Computational techniques for the nonequilibrium quantum field theory simulation of MOSFETs. In: IWCE 7th international worklshop on computational electronics; 2000. p. 30–31.

5. Carbon nanotubes in microelectronic applications;Kreupl;Advanced micro & nanosystems,2008

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