Author:
Cho Moonju,Akheyar Amal,Aoulaiche Marc,Degraeve Robin,Ragnarsson Lars-Åke,Tseng Joshua,Hoffmann Thomas Y.,Groeseneken Guido
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Sub-1nm EOT HfSix/HfO2 gate stack using novel si extrusion process for high performance application;Ando;IEEE VLSI Tech Dig,2006
2. On the reverse short channel effect in deep submicron heterojunction MOSFET’s and its impact on the current–voltage behavior;Collaert;IEEE Trans Electron Dev,2000
3. Gate stack technology for nanoscale devices;Lee;Mater Today,2006
4. Roles of oxygen vacancy in HfO2 /ultra-thin SiO2 gate stacks – comprehensive understanding of VFB roll-off;Akiyama;IEEE VLSI Tech Dig,2008
5. Observation of single interface traps in submicron MOSFET’s by charge pumping;Groeseneken;IEEE Trans Electron Dev,1996
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